Test structure for characterizing metal thickness in damascene CMP technology

Author

Toffoli, Alain ; Maitrejean, Sylvain ; De Pontcharra, Jean Duport ; De Crecy, Francois ; Bouchu, David ; Arnaud, Lucile ; Boulanger, Fabien

Author_Institution

CEA LETI-Minatec, Grenoble

fYear

2008

fDate

24-27 March 2008

Firstpage

210

Lastpage

213

Abstract

In the damascene processed tracks, the electrical extraction of the metal thickness is reached through a complex analysis. This is due to processing defects such as dishing and erosion, and linewidths decreasing. This work introduces a new test structure, coupled with the temperature coefficient of resistance (TCR) method in Warkusz, F., et al, (1978). This allows an accurate characterization of metal thickness. At the same time, parameters such as sheet resistance and resistivity become easier to extract for statistical processing analysis.

Keywords

chemical mechanical polishing; statistical analysis; damascene CMP technology; dishing; electrical extraction; erosion; metal thickness; statistical processing analysis; temperature coefficient of resistance method; test structure; Conductivity; Coupling circuits; Current measurement; Dielectrics; Electrical resistance measurement; Inorganic materials; Integrated circuit interconnections; Microelectronics; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2008. ICMTS 2008. IEEE International Conference on

Conference_Location

Edinburgh

Print_ISBN

978-1-4244-1800-8

Electronic_ISBN

978-1-4244-1801-5

Type

conf

DOI

10.1109/ICMTS.2008.4509340

Filename

4509340