Title :
Test structure for characterizing metal thickness in damascene CMP technology
Author :
Toffoli, Alain ; Maitrejean, Sylvain ; De Pontcharra, Jean Duport ; De Crecy, Francois ; Bouchu, David ; Arnaud, Lucile ; Boulanger, Fabien
Author_Institution :
CEA LETI-Minatec, Grenoble
Abstract :
In the damascene processed tracks, the electrical extraction of the metal thickness is reached through a complex analysis. This is due to processing defects such as dishing and erosion, and linewidths decreasing. This work introduces a new test structure, coupled with the temperature coefficient of resistance (TCR) method in Warkusz, F., et al, (1978). This allows an accurate characterization of metal thickness. At the same time, parameters such as sheet resistance and resistivity become easier to extract for statistical processing analysis.
Keywords :
chemical mechanical polishing; statistical analysis; damascene CMP technology; dishing; electrical extraction; erosion; metal thickness; statistical processing analysis; temperature coefficient of resistance method; test structure; Conductivity; Coupling circuits; Current measurement; Dielectrics; Electrical resistance measurement; Inorganic materials; Integrated circuit interconnections; Microelectronics; Temperature; Testing;
Conference_Titel :
Microelectronic Test Structures, 2008. ICMTS 2008. IEEE International Conference on
Conference_Location :
Edinburgh
Print_ISBN :
978-1-4244-1800-8
Electronic_ISBN :
978-1-4244-1801-5
DOI :
10.1109/ICMTS.2008.4509340
