Title :
Test structure definition for dummy metal filling strategy dedicated to advanced integrated RF inductors
Author :
Pastore, Carine ; Gianesello, Frederic ; Gloria, Daniel ; Serret, Emmanuelle ; Benech, Philipper
Author_Institution :
STMicroelectronics, Crolles
Abstract :
A complete strategy to manage dummy fills inside a large spectrum of integrated RF inductors realized in a 0.13 mum CMOS technology using a dual damascene copper back end of line (BEOL) is presented here. Thanks to the developed test structures, their RF characterization, and a design of experiment (DOE) modeling analysis, it has been possible to determine the right metal fill density to insert inside inductors in order to be compliant with digital metal density rules without degrading their electrical performances.
Keywords :
CMOS integrated circuits; design of experiments; inductors; CMOS technology; design of experiment modeling; dual damascene copper back end of line; dummy metal filling; integrated RF inductors; metal fill density; size 0.13 mum; CMOS technology; Copper; Filling; Inductors; Performance analysis; Radio frequency; Semiconductor device modeling; Technology management; Testing; US Department of Energy;
Conference_Titel :
Microelectronic Test Structures, 2008. ICMTS 2008. IEEE International Conference on
Conference_Location :
Edinburgh
Print_ISBN :
978-1-4244-1800-8
Electronic_ISBN :
978-1-4244-1801-5
DOI :
10.1109/ICMTS.2008.4509341
