DocumentCode :
3341030
Title :
Optically enhanced absorption in thin silicon layers using photonic crystals
Author :
Gee, Jamek M.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
150
Lastpage :
153
Abstract :
Yablonovitch derived a limit to enhancement in optical absorption in the weak absorption regime for a textured solar cell of 4n2, where n is the refractive index of the medium. This limit assumes that the incident rays experience full randomization inside the medium so that all the photonic states are filled equally. We demonstrate that this statistical limit can be exceeded over a limited spectral and angular range using photonic structures. We theoretically examine the use of photonic crystals to improve the optical absorption. Photonic crystals have a periodic modulation of the refractive index that alters the photonic density of states. A simple model of a silicon photonic crystal is presented in order to illustrate the possible optical enhancement in thin silicon layers.
Keywords :
elemental semiconductors; optical materials; photonic band gap; photonic crystals; refractive index; semiconductor thin films; silicon; solar cells; surface texture; Si; optical enhancement; optically enhanced absorption; photonic crystals; photonic density of states; photonic states; photonic structures; refractive index; textured solar cell; thin silicon layers; Absorption; Geometrical optics; Optical coupling; Optical refraction; Optical scattering; Optical variables control; Photonic crystals; Photovoltaic cells; Refractive index; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190478
Filename :
1190478
Link To Document :
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