Title :
Reliability properties in sub-50nm high performance high-k/metal gate stacks SiGe pMOSFETs
Author :
Park, Min Sang ; Kang, Chang Yong ; Choi, Do-Young ; Sohn, Chang-Woo ; Jeong, Eui-Young ; Chung, Jinyong ; Lee, Jeong-Soo ; Jeong, Yoon-Ha
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
Abstract :
We present the reliabilities in compressively strained SiGe channel pMOSFETs. A Si capping layer in SiGe channel pMOSFETs improved the negative bias temperature instability (NBTI) without device performance degradation. Also, the Si capped device exhibits the better NBTI reliability than the Si channel device. Because a Si capped structure forms the double barrier layer in the interface, it is the primary cause of improved NBTI. These results show that a Si capping layer should be used in SiGe channel pMOSFETs for better reliabilities and performance.
Keywords :
Ge-Si alloys; MOSFET; elemental semiconductors; high-k dielectric thin films; semiconductor device reliability; silicon; NBTI reliability; SiGe-Si; capping layer; device performance degradation; double barrier layer; high-k-metal gate stack channel pMOSFET; negative bias temperature instability; reliability property; Logic gates; MOSFETs; Metals; Performance evaluation; Reliability; Silicon; Silicon germanium;
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2010 IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-8896-4
DOI :
10.1109/NMDC.2010.5651918
