Determination of physical properties of semiconductor-oxide-semiconductor structures using a new fast gate current measurement protocol

Author

Chiquet, P. ; Masson, P. ; Micolau, G. ; Laffont, R. ; Lalande, F. ; Postel-Pellerin, J. ; Regnier, A.

Author_Institution

IM2NP, Aix-Marseille Univ., Marseille, France

fYear

2013

fDate

June 30 2013-July 4 2013

Firstpage

561

Lastpage

564

Abstract

A new experimental protocol involving fast tunneling current measurements has been set up to highlight various physical properties of the floating gate / tunnel oxide / drain capacitor of Non-Volatile Memory (NVM) devices. Transient gate currents obtained on n⁺⁺/siO₂/n⁺ MOS capacitors representative of the real device for negative gate signals are interpreted and successfully modeled.

Keywords

MOS capacitors; electric current measurement; protocols; random-access storage; silicon compounds; MOS capacitors; NVM devices; SiO₂; drain capacitor; fast gate current measurement protocol; fast tunneling current measurements; floating gate; negative gate signals; nonvolatile memory devices; physical properties; semiconductor-oxide-semiconductor structures; transient gate currents; tunnel oxide; Capacitors; Charge carrier processes; Current measurement; Impact ionization; Logic gates; Transient analysis; Tunneling; MOS; band-to-band tunneling; dynamic current measurement; impact ionization; non-volatile memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid Dielectrics (ICSD), 2013 IEEE International Conference on

Conference_Location

Bologna

ISSN

2159-1687

Print_ISBN

978-1-4799-0807-3

Type

conf

DOI

10.1109/ICSD.2013.6619735

Filename

6619735