Two-power-law relaxation processes in semiconductors possessing metastable defects

Author

Jurlewicz, Agnieszka ; Trzmiel, Justyna

Author_Institution

Hugo Steinhaus Center, Wroclaw Univ. of Technol., Wrocław, Poland

fYear

2013

fDate

June 30 2013-July 4 2013

Firstpage

576

Lastpage

579

Abstract

In this paper the two-power-law relaxation behavior of semiconducting materials possessing deep, metastable defects is analyzed in terms of a model leading to new power-law relaxation pattern being a mixture of the generalized Mittag-Leffler (GML) and Havriliak-Negami (HN) responses, which enlarges the class of physically well grounded fitting functions. Applying the probabilistic representation of the relaxation decay, we show that such a mixture can be derived from an extension of the stochastic model of correlated clusters.

Keywords

dielectric relaxation; semiconductor materials; stochastic processes; GML response; HN response; Havriliak-Negami response; generalized Mittag-Leffler response; metastable defects; physically-well-grounded fitting function; power-law relaxation pattern; probabilistic representation; relaxation decay; semiconducting materials; semiconductor; stochastic model; two-power-law relaxation process; Conferences; Dielectrics; Indium; Random variables; Solids; Stochastic processes;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid Dielectrics (ICSD), 2013 IEEE International Conference on

Conference_Location

Bologna

ISSN

2159-1687

Print_ISBN

978-1-4799-0807-3

Type

conf

DOI

10.1109/ICSD.2013.6619740

Filename

6619740