Material characteristics of crystalline Si thin-film solar cells on glass fabricated by diode laser crystallization

Diode laser crystallization was performed silicon thin film on glass. Large linear grains along the laser scanning direction were formed when the laser scanning speed of 150-1000 mm/min was used. First order □3 twin boundaries were found to be dominating grain boundaries. Pole figure measurement showed very uniform (100) texture can be formed when SiO_x layer capping layer was used. Promising bulk resistivity of the as-crystallized films was resulted. Emitter was formed using spin on diffusion and subsequent RTP Suns V_oc results after emitter formation exhibited n=1 recombination. Hydrogen plasma passivation effectively passivated grain boundaries.