DocumentCode :
3341619
Title :
Surface texturing for silicon solar cells using reactive ion etching technique
Author :
Kumaravelu, G. ; Alkaisi, M.M. ; Bittar, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Canterbury Univ., Christchurch, New Zealand
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
258
Lastpage :
261
Abstract :
Surface texturing is an effective and more lasting technique in reducing reflections and improving light trapping compared to antireflection coatings. A surface texturing technique using reactive ion etching (RIE) method suitable for crystalline and multi crystalline solar cells, which resulted in surfaces with negligible reflection in the visible band is described. Different texturing structures (pillars, holes and black silicon) have been studied and compared in the wavelength range from 250nm-2500nm. It is found that the reflectance of the textured column structures were less than 0.4% at wavelengths from 500 nm to 1000 nm and showed a minimum of 0.29% at 1000 nm while the reflectivity from black silicon is around 1% and hole structures is around 6.8% in the same wavelength range.
Keywords :
elemental semiconductors; reflectivity; silicon; solar cells; sputter etching; surface texture; 250 to 2500 nm; RIE; Si; reactive ion etching; reflectance; reflectivity; silicon solar cells; surface texturing; texturing structure; Coatings; Crystallization; Etching; Optical reflection; Photovoltaic cells; Plasma applications; Plasma chemistry; Reflectivity; Silicon; Surface texture;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190507
Filename :
1190507
Link To Document :
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