Comparative study of C-V characteristics in Si-NWFET and MOSFET

Author

Jeong, Yoon-Ha ; Baek, Rock-Hyun ; Baek, Chang-Ki ; Yeo, Kyoung Hwan ; Kim, Dong-Won ; Chung, Jin Yong ; Kim, Dae Mann

Author_Institution

Deptartment of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea

fYear

2010

fDate

12-15 Oct. 2010

Firstpage

26

Lastpage

29

Abstract

In this paper, we report the C-V characteristics measured from nanowire capacitor (NWCAP), which has been fabricated by connecting in parallel a large number of identically processed nanowire FETs. By using the C-V data from nanowire devices, we examined the gate voltage response of undoped floating channel. Furthermore, the bias independent overlap capacitance and bias dependent fringing capacitance associated with 1D channel contacting 3D Source/ Drain are extracted. The measured capacitance data are compared with the planar MOS capacitor (MOSCAP) data.

Keywords

MOS capacitors; MOSFET; elemental semiconductors; nanowires; silicon; 1D channel; 3D source/drain; C-V characteristic; MOSCAP; MOSFET; NWCAP; NWFET; Si; bias dependent fringing capacitance; gate voltage response; identically processed nanowire FET; independent overlap capacitance; nanowire capacitor; nanowire device; planar MOS capacitor; undoped floating channel; Capacitance; Capacitance measurement; Capacitance-voltage characteristics; FETs; Logic gates; MOSFET circuits; Silicon; C-V; capacitance; floating channel; nanowire; overlap; parasitic; undoped;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference (NMDC), 2010 IEEE

Conference_Location

Monterey, CA

Print_ISBN

978-1-4244-8896-4

Type

conf

DOI

10.1109/NMDC.2010.5651942

Filename

5651942