Title :
Electromechanical characteristics of a bondless pressure contact IGBT
Author :
Wakeman, F. ; Billett, K. ; Irons, R. ; Evans, M.
Author_Institution :
Westcode Semicond., Chippenham, UK
Abstract :
The mechanical design of a completely bondless, pressure contact IGBT is discussed and its implications on the electrical characteristics are compared to those of a similarly rated module device. It is determined that the differences in the electrical characteristics of a pressure contact IGBT may offer certain advantages in some applications
Keywords :
electrical contacts; equivalent circuits; insulated gate bipolar transistors; semiconductor device measurement; semiconductor device models; semiconductor device testing; applications; bondless pressure contact IGBT; electrical characteristics; electromechanical characteristics; mechanical design; Assembly; Bonding; Chip scale packaging; Contacts; Electric variables; Encapsulation; Insulated gate bipolar transistors; Insulation life; Testing; Wire;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1999. APEC '99. Fourteenth Annual
Conference_Location :
Dallas, TX
Print_ISBN :
0-7803-5160-6
DOI :
10.1109/APEC.1999.749659
