DocumentCode
3341802
Title
Phosphorus gettering in multicrystalline silicon studied by neutron activation analysis
Author
Macdonald, Daniel ; Cuevas, Andres ; Kinomura, Atsushi ; Nakano, Yukihiro
Author_Institution
Dept. of Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear
2002
fDate
19-24 May 2002
Firstpage
285
Lastpage
288
Abstract
Neutron activation analysis (NAA) is a powerful and sensitive technique for measuring trace amounts of impurities. In this work, we have applied NAA to the problem of identifying metallic impurities within the bulk of solar-grade cast multicrystalline silicon (mc-Si) wafers. In particular, the change in concentrations of these contaminants after phosphorus gettering is monitored, revealing a marked reduction in some metal species, but not in others.
Keywords
elemental semiconductors; getters; neutron activation analysis; phosphorus; silicon; NAA; impurity traces; mc-Si wafers; metallic impurities; multicrystalline silicon; neutron activation analysis; phosphorus gettering; solar-grade cast multicrystalline silicon; Activation analysis; Charge carrier lifetime; Gettering; Impurities; Iron; Monitoring; Neutrons; Power engineering and energy; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN
1060-8371
Print_ISBN
0-7803-7471-1
Type
conf
DOI
10.1109/PVSC.2002.1190514
Filename
1190514
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