• DocumentCode
    3341920
  • Title

    Defect density of crystalline Si films fabricated by high-speed zone melting crystallization for solar cells

  • Author

    Yokoyama, Shuhei ; Ihara, Manabu ; Hashizume, Hiroaki ; Yokoyama, Chiaki ; Komiyama, Hiroshi

  • Author_Institution
    Inst. of Multidisciplinary Res. for Adv. Mater., Tohoku Univ., Sendai, Japan
  • fYear
    2002
  • fDate
    19-24 May 2002
  • Firstpage
    312
  • Lastpage
    315
  • Abstract
    The defect density of crystalline Si films fabricated by high-speed zone melting crystallization (ZMC) of amorphous Si (a-Si) and by high-speed zone melting re-crystallization (ZMR) of polycrystalline Si (poly-Si) was investigated by using electron spin resonance (ESR). The crystal defect density of the sandwich-structured a-Si ZMC films (SiO2 film/Si film/SiO2 film) was lower than that of the sandwich-structured poly-Si ZMR films for a lower-heater temperature range of 1470°C to 1570°C and for an upper-heater scan-speed range of 0.7-4.5 mm/s. The defect density of the bulk a-Si ZMC films was below the detection limit of ESR, even at high scan speed of 7.0 mm/s. Therefore, a-Si ZMC films can be used to fabricate solar cells that have an efficiency higher than those fabricated by current processes involving poly-Si ZMR films.
  • Keywords
    elemental semiconductors; paramagnetic resonance; semiconductor materials; semiconductor thin films; silicon; solar cells; zone melting recrystallisation; 1470 to 1570 degC; ESR; SiO2-Si-SiO2; ZMC; ZMR; amorphous Si; crystal defect density; crystalline Si films; defect density; efficiency; electron spin resonance; high-speed zone melting crystallization; high-speed zone melting re-crystallization; poly-Si; solar cells; Amorphous materials; Atomic measurements; Costs; Crystallization; Etching; Fabrication; Paramagnetic resonance; Photovoltaic cells; Semiconductor films; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
  • ISSN
    1060-8371
  • Print_ISBN
    0-7803-7471-1
  • Type

    conf

  • DOI
    10.1109/PVSC.2002.1190521
  • Filename
    1190521