Title :
Ribbon-growth-on-substrate: Progress in high-speed crystalline silicon wafer manufacturing
Author :
Schönecker, A. ; Laas, L. ; Gutjahr, A. ; Wyers, P. ; Reinink, A. ; Wiersma, B.
Author_Institution :
ECN, Energy Res. Centre of the Netherlands, Petten, Netherlands
Abstract :
The ribbon-growth-on-substrate (RGS) silicon wafer manufacturing technology is the most promising highspeed wafer production technique under development at the moment. It has the promise to lead to a manufacturing technology, which allows silicon wafer manufacturing at the 25 MWp/a to 50 MWp/a level. A future development of this technology in the areas, RGS machine prototyping, wafer quality improvement and solar cell process optimization should lead to a commercialization of this technology in 2005. In the following a status of the RGS technology today and the most probable road ahead is outlined.
Keywords :
elemental semiconductors; semiconductor device manufacture; silicon; solar cells; RGS machine prototyping; RGS silicon wafer manufacturing technology; Si; high-speed crystalline silicon wafer manufacturing; highspeed wafer production technique; ribbon-growth-on-substrate; solar cell process optimization; wafer quality improvement; Commercialization; Costs; Crystallization; Manufacturing; Optimized production technology; Photovoltaic cells; Prototypes; Silicon; Strontium; Throughput;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190522
