Title :
Silicon solar cells textured by low damage RIE with natural lithography
Author :
Manshanden, P. ; Burgers, A.R. ; Nositschka, W.A. ; Voige, O. ; Weeber, A.W.
Author_Institution :
ECN Solar Energy, Petten, Netherlands
Abstract :
RIE with natural lithography has two advantages over RIE with automasking: the process causes less surface damage and the process window is broader. We have systematically explored the parameter range of our process and identified a natural lithography RIE process which causes a minimum amount of surface damage. By using this RIE process and a wet chemical etch of a few nanometers, we reached a gain in shortcircuit current of 2.9% and no loss in open circuit voltage. This resulted in an absolute efficiency gain of 0.6% for the RIE textured wafers.
Keywords :
elemental semiconductors; etching; lithography; semiconductor device measurement; silicon; solar cells; sputter etching; surface texture; RIE textured wafers; Si; low damage RIE; natural lithography; silicon solar cells; solar cells; surface damage; texture; wet chemical etch; Absorption; Lithography; Needles; Photovoltaic cells; Scanning electron microscopy; Silicon; Solar energy; Surface cleaning; Surface texture; Wet etching;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190524
