DocumentCode :
3342210
Title :
A determination of the key sources of variation affecting ingot lifetime
Author :
Nickerson, J. ; Mandrell, L. ; Wang, T.H. ; Ciszek, T.F.
Author_Institution :
Shell Solar Industries L.P., Camarillo, CA, USA
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
368
Lastpage :
370
Abstract :
The efficacy of ingot level lifetime testing has been limited due to historically poor correlation between ingot lifetime and cell performance. Studies have shown that the DC photoconductance decay is capable of determining differences in average ingot lifetime as a function of starting material, but those studies showed the effects to be a small portion of the total variation. This work looks at a new attempt to correlate ingot lifetimes and cell performance given a more stable starting material supply, and an overall accounting of the sources of variation contributing to ingot lifetime. Finally, ingots whose lifetime was particularly low relative to the predicted performance were studied leading to an indication of additional root causes. The work, as a whole, provides a perspective on the practical impact of various factors on ingot lifetime.
Keywords :
semiconductor growth; solar cells; DC photoconductance decay; cell performance; ingot lifetime; solar cells; Analysis of variance; Independent component analysis; Laboratories; Life testing; Lifetime estimation; Performance analysis; Photoconducting materials; Renewable energy resources; Tail; Telephony;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190535
Filename :
1190535
Link To Document :
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