DocumentCode
3342225
Title
Implied-Voc and Suns-Voc measurements in multicrystalline solar cells
Author
Bowden, S. ; Yelundur, V. ; Rohatgi, A.
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2002
fDate
19-24 May 2002
Firstpage
371
Lastpage
374
Abstract
Identifying loss mechanisms and predicting device performance are key goals of device and process characterization. Photoconductance measurements allow the extraction of the Implied Voc and Suns Voc which together can be used for process monitoring, for loss analysis and to identify the potential device performance in the absence of unwanted defects. In this paper, we measure the Implied Voc and Suns Voc from solar cells with a range of different substrates and at different stages in processing. These measurements are used to analyze the correlation with the actual Voc to determine the impact of both non-idealities such as depletion region recombination, and expected effects such as lifetime changes, both during processing and in the final devices.
Keywords
carrier density; carrier lifetime; photoconductivity; solar cells; Implied Voc; Suns Voc; depletion region recombination; device performance; lifetime changes; loss analysis; loss mechanisms; multicrystalline solar cells; photoconductance measurements; potential device performance; process monitoring; Analytical models; Charge carrier density; Charge carrier lifetime; Conductivity measurement; Density measurement; Doping; Photovoltaic cells; Radio frequency; Sun; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN
1060-8371
Print_ISBN
0-7803-7471-1
Type
conf
DOI
10.1109/PVSC.2002.1190536
Filename
1190536
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