• DocumentCode
    3342225
  • Title

    Implied-Voc and Suns-Voc measurements in multicrystalline solar cells

  • Author

    Bowden, S. ; Yelundur, V. ; Rohatgi, A.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2002
  • fDate
    19-24 May 2002
  • Firstpage
    371
  • Lastpage
    374
  • Abstract
    Identifying loss mechanisms and predicting device performance are key goals of device and process characterization. Photoconductance measurements allow the extraction of the Implied Voc and Suns Voc which together can be used for process monitoring, for loss analysis and to identify the potential device performance in the absence of unwanted defects. In this paper, we measure the Implied Voc and Suns Voc from solar cells with a range of different substrates and at different stages in processing. These measurements are used to analyze the correlation with the actual Voc to determine the impact of both non-idealities such as depletion region recombination, and expected effects such as lifetime changes, both during processing and in the final devices.
  • Keywords
    carrier density; carrier lifetime; photoconductivity; solar cells; Implied Voc; Suns Voc; depletion region recombination; device performance; lifetime changes; loss analysis; loss mechanisms; multicrystalline solar cells; photoconductance measurements; potential device performance; process monitoring; Analytical models; Charge carrier density; Charge carrier lifetime; Conductivity measurement; Density measurement; Doping; Photovoltaic cells; Radio frequency; Sun; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
  • ISSN
    1060-8371
  • Print_ISBN
    0-7803-7471-1
  • Type

    conf

  • DOI
    10.1109/PVSC.2002.1190536
  • Filename
    1190536