DocumentCode :
3342225
Title :
Implied-Voc and Suns-Voc measurements in multicrystalline solar cells
Author :
Bowden, S. ; Yelundur, V. ; Rohatgi, A.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
371
Lastpage :
374
Abstract :
Identifying loss mechanisms and predicting device performance are key goals of device and process characterization. Photoconductance measurements allow the extraction of the Implied Voc and Suns Voc which together can be used for process monitoring, for loss analysis and to identify the potential device performance in the absence of unwanted defects. In this paper, we measure the Implied Voc and Suns Voc from solar cells with a range of different substrates and at different stages in processing. These measurements are used to analyze the correlation with the actual Voc to determine the impact of both non-idealities such as depletion region recombination, and expected effects such as lifetime changes, both during processing and in the final devices.
Keywords :
carrier density; carrier lifetime; photoconductivity; solar cells; Implied Voc; Suns Voc; depletion region recombination; device performance; lifetime changes; loss analysis; loss mechanisms; multicrystalline solar cells; photoconductance measurements; potential device performance; process monitoring; Analytical models; Charge carrier density; Charge carrier lifetime; Conductivity measurement; Density measurement; Doping; Photovoltaic cells; Radio frequency; Sun; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190536
Filename :
1190536
Link To Document :
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