A pseudo-BiCMOS high gain-bandwidth low noise operational amplifier using a Darlington input stage

Author

Holman, W. Timothy ; Connelly, J.Alvin

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

3

fYear

1995

fDate

30 Apr-3 May 1995

Firstpage

1724

Abstract

A high gain-bandwidth low noise operational amplifier using lateral PNP bipolar transistors in the input stage has been fabricated in a standard 1.2 μm digital n-well CMOS process. The op amp has an area of 0.216 mm² with E_u=7.3 nV/√(Hz), I _n=0.20 pA/√(Hz), E_n and I_n 1/f noise corner frequencies less than 25 Hz, a -3 dB bandwidth of 4.5 MHz with a closed loop gain of 53 dB, a minimum PSRR (DC) of 68 dB, a CMRR (DC) of 100 dB, a minimum output slew rate of 39 V/μs, and a quiescent current of 2.1 mA at supply voltages of ±2.5 V

Keywords

BiCMOS analogue integrated circuits; feedback amplifiers; integrated circuit noise; operational amplifiers; -2.5 to 2.5 V; -3 dB bandwidth; 1.2 micron; 1/f noise corner frequencies; 2.1 mA; 4.5 MHz; 53 dB; CMRR; Darlington input stage; closed loop gain; digital n-well CMOS process; gain-bandwidth product; lateral PNP bipolar transistors; low noise operational amplifier; minimum PSRR; minimum output slew rate; pseudo-BiCMOS; quiescent current; supply voltage; Bandwidth; Bipolar transistors; CMOS process; CMOS technology; Frequency; Integrated circuit noise; Low-noise amplifiers; MOSFETs; Operational amplifiers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1995. ISCAS '95., 1995 IEEE International Symposium on

Conference_Location

Seattle, WA

Print_ISBN

0-7803-2570-2

Type

conf

DOI

10.1109/ISCAS.1995.523745

Filename

523745