InP-Based Vertical-Cavity Surface-Emitting Lasers With Type-II Quantum Wells

Author

Sprengel, Stephan ; Veerabathran, Ganpath Kumar ; Federer, Florian ; Andrejew, Alexander ; Amann, Markus-Christian

Author_Institution

Tech. Univ. Munchen, Munich, Germany

Volume

21

Issue

6

fYear

2015

fDate

Nov.-Dec. 2015

Firstpage

1

Lastpage

10

Abstract

InP-based type-II quantum wells are a promising concept for long wavelength lasers beyond 2 μm. In this paper, recently developed vertical-cavity surface-emitting lasers for 2.5 μm with type-II quantum wells are introduced and their performance is discussed. These lasers demonstrate single-mode CW operation with an output power up to 400 μW and side-mode suppression ratio of 30 dB. The maximum temperature for CW operation is 10°C. In order to further analyze their performance, a phenomenological model for the temperature dependences of threshold current densities is presented. Based on this model influence of heat sink temperature, current broadening and self-heating is quantified and conclusions are drawn for an improved design.

Keywords

III-V semiconductors; current density; heat sinks; indium compounds; laser beams; laser cavity resonators; quantum well lasers; surface emitting lasers; InP; current broadening; heat sink temperature; maximum temperature; output power; self-heating; side-mode suppression ratio; single-mode CW operation; temperature 10 degC; temperature dependences; threshold current densities; type-II quantum wells; vertical-cavity surface-emitting lasers; wavelength 2.5 mum; Junctions; Laser modes; Quantum well lasers; Temperature; Vertical cavity surface emitting lasers; Laser; Surface Emitting; Type-II quantum well; VCSEL; W-shaped quantum well; laser; surface emitting;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2015.2424834

Filename

7089224