DocumentCode :
3342445
Title :
Achievement of 19.7% efficiency with a small-sized Cu(InGa)(SeS)2 solar cells prepared by sulfurization after selenizaion process with Zn-based buffer
Author :
Nakamura, Mitsutoshi ; Kouji, Yamaguchi ; Chiba, Ryosuke ; Hakuma, Hideki ; Kobayashi, Takehiko ; Nakada, Takashi
Author_Institution :
Energy Solution Bus. Center, Showa Shell Sekiyu K.K., Atsugi, Japan
fYear :
2013
fDate :
16-21 June 2013
Abstract :
We have been focused on improving conversion efficiency of Cu(In, Ga)(Se, S)2 (CIS)-based solar cell with 30×30cm2-sized submodules, and achieved an efficiency of 17.8% up to now[1]. In this report, we will present an achievement of certified 19.7% conversion efficiency with a small-sized single cell (approximately 0.5cm2) extracted from a 30×30cm2-sized substrate prepared by the sputtering followed by sulfurization after selenization (SAS) method with Zn-based buffer layer. As a leading company of CIS-based solar module, we will keep exploring the potential of CIS-based solar cell both on commercial and lab scales.
Keywords :
copper compounds; gallium compounds; indium compounds; selenium compounds; solar cells; sputtered coatings; sulphur compounds; ternary semiconductors; zinc; CIS-based solar cell; CIS-based solar module; Cu(InGa)(SeS)2; selenizaion process; solar cells; sputtering; substrate; sulfurization; zinc-based buffer; zinc-based buffer layer; Buffer layers; Photonic band gap; Photovoltaic cells; Sputtering; Substrates; Synthetic aperture sonar; Voltage measurement; 19.7%; CIS; Cu(In, Ga)(Se, S)2; EQE spectrum; Solar Frontier; Zn(O, S, OH)x buffer layer; band gap; submodule;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/PVSC.2013.6744278
Filename :
6744278
Link To Document :
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