Title :
Design, preparation and performance of Cu(In, Ga)(S, Se)2/Zn(O, S)/ZnO:Al solar cells
Author :
Klenk, R. ; Gerhardt, Paul ; Lauermann, I. ; Steigert, A. ; Stober, Frederick ; Hergert, Frank ; Zweigart, Siegmund ; Lux-Steiner, Martha C.
Author_Institution :
Helmholtz-Zentrum Berlin fur Mater. und Energie, Berlin, Germany
Abstract :
Junction formation by chemical bath deposition of CdS is a well established and robust process. To avoid the well known drawbacks of this approach, we propose to omit the CdS buffer layer and to directly sputter a modified window layer where Zn(O, S) is used instead of ZnO to improve the band line-up. This could result in completely dry in-line manufacturing of Cd-free modules using only proven deposition technologies. Key requisites for a new module structure are that the efficiency is not adversely affected and that the process is stable with a wide process window. For a first assessment, tests were carried out using absorbers from industrial production.
Keywords :
II-VI semiconductors; chemical vapour deposition; copper compounds; gallium compounds; indium compounds; semiconductor junctions; solar cells; sputter deposition; sulphur compounds; ternary semiconductors; wide band gap semiconductors; zinc compounds; CdS; Cu(InGa)(SSe)2; Zn(OS); ZnO:Al; absorbers; band line-up; buffer layer; chemical bath deposition; dry in-line manufacturing; industrial production; junction formation; modified window layer; module structure; solar cells; sputter deposition technology; Buffer layers; Photovoltaic cells; Production; Sputtering; Standards; Substrates; Zinc oxide; S); Zn(O; chalcopyrites; junction formation; sputtering;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744279