Numerical simulation and experimental facts about bottom-cell optimization for III-V on Silicon multijunction solar cells

This work reviews both theoretically - using numerical simulations with Silvaco TCAD- and experimentally several key features for the design and optimization of the Si bottom subcell for its integration on III-V on Si multijunction solar cells. We have focused on 1) the optimization of the p-n junction, i.e. the emitter and base configurations; 2) the impact of the BSF layer and other alternatives - point-contact rear metallization - for back surface passivation; and 3) the role of the GaP/Si interface in the device performance.