Title :
Overcoming phosphorus emitter limitations in PERC Si solar cells by using a gallium-phosphide heteroemitter
Author :
Wagner, Hannes ; Ohrdes, Tobias ; Dastgheib-Shirazi, Amir ; Puthen-Veettil, Binesh ; Konig, D. ; Altermatt, Pietro P.
Author_Institution :
Dept. Solar Energy, Leibniz Univ. of Hannover, Hannover, Germany
Abstract :
The performance of PERC Si solar cells is often limited by recombination in the emitter. We use numerical device simulations to evaluate efficiency limits of different types of phosphorus emitters in an example of a realistic PERC cell. The resulting maximum efficiencies are between 20.5% and 21.2%. The same cell simulated with an emitter made of an n-doped crystalline gallium phosphide layer shows an efficiency limit of 21.6%. This hetero-emitter causes much lower recombination losses than a nearly ideal phosphorus emitter, resulting in a higher Voc. In addition a lower base doping is necessary which, in turn, reduces the impact of the boron-oxygen complex.
Keywords :
elemental semiconductors; gallium compounds; silicon; solar cells; PERC silicon solar cells; boron-oxygen complex; gallium-phosphide heteroemitter; n-doped crystalline gallium phosphide layer; passivated emitter and rear solar cells; phosphorus emitter limitations; recombination losses; Doping; Photonic band gap; Photovoltaic cells; Radiative recombination; Semiconductor process modeling; Silicon; Solids; device simulation; gallium phosphide; phosphorus emitter; silicon;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744288