• DocumentCode
    3342692
  • Title

    Overcoming phosphorus emitter limitations in PERC Si solar cells by using a gallium-phosphide heteroemitter

  • Author

    Wagner, Hannes ; Ohrdes, Tobias ; Dastgheib-Shirazi, Amir ; Puthen-Veettil, Binesh ; Konig, D. ; Altermatt, Pietro P.

  • Author_Institution
    Dept. Solar Energy, Leibniz Univ. of Hannover, Hannover, Germany
  • fYear
    2013
  • fDate
    16-21 June 2013
  • Abstract
    The performance of PERC Si solar cells is often limited by recombination in the emitter. We use numerical device simulations to evaluate efficiency limits of different types of phosphorus emitters in an example of a realistic PERC cell. The resulting maximum efficiencies are between 20.5% and 21.2%. The same cell simulated with an emitter made of an n-doped crystalline gallium phosphide layer shows an efficiency limit of 21.6%. This hetero-emitter causes much lower recombination losses than a nearly ideal phosphorus emitter, resulting in a higher Voc. In addition a lower base doping is necessary which, in turn, reduces the impact of the boron-oxygen complex.
  • Keywords
    elemental semiconductors; gallium compounds; silicon; solar cells; PERC silicon solar cells; boron-oxygen complex; gallium-phosphide heteroemitter; n-doped crystalline gallium phosphide layer; passivated emitter and rear solar cells; phosphorus emitter limitations; recombination losses; Doping; Photonic band gap; Photovoltaic cells; Radiative recombination; Semiconductor process modeling; Silicon; Solids; device simulation; gallium phosphide; phosphorus emitter; silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.2013.6744288
  • Filename
    6744288