DocumentCode :
3342705
Title :
Tunneling spectroscopy of band edge structures of Bi2Te3 and Sb2Te3
Author :
Funagai, K. ; Miyahura, Y. ; Ozaki, H. ; Kulbachinskii, V.A.
Author_Institution :
Dept. of Electr. Eng., Waseda Univ., Tokyo, Japan
fYear :
1996
fDate :
26-29 March 1996
Firstpage :
408
Lastpage :
411
Abstract :
Tunneling study was made on Bi/sub 2/Te/sub 3/ and Sb/sub 2/Te/sub 3/ at 4.2 K, 77 K and 295 K. Energy gap of Bi/sub 2/Te/sub 3/ was estimated to be 0.25 eV, 0.22 eV and 0.20 eV at 4.2 K, 77 K and 295 K, respectively.
Keywords :
MIS structures; antimony compounds; bismuth compounds; energy gap; semiconductor materials; thermoelectricity; tunnelling; 0.2 eV; 0.22 eV; 0.25 eV; 295 K; 4.2 K; 77 K; Bi/sub 2/Te/sub 3/; Sb/sub 2/Te/sub 3/; band edge structures; energy gap; metal-insulator-semiconductor junction; thermoelectrics; tunneling; Bismuth; Crystalline materials; Crystals; Energy measurement; Insulation; Spectroscopy; Tellurium; Temperature dependence; Thermoelectricity; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 1996., Fifteenth International Conference on
Conference_Location :
Pasadena, CA, USA
Print_ISBN :
0-7803-3221-0
Type :
conf
DOI :
10.1109/ICT.1996.553516
Filename :
553516
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3342705
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