Title :
One-dimensional model of the power bipolar transistor with thermoelectrical interactions for circuit applications
Author :
Maurel, T. ; Bouchakour, R. ; Lallement, C.
Author_Institution :
Ecole Nat. Superieure des Telecommun., Paris, France
fDate :
30 Apr-3 May 1995
Abstract :
We have developed an electrothermal model for the bipolar power transistor, implemented in the Saber circuit simulator, in which the device´s temperature becomes an interactive variable during the simulation. Two approaches for the electrothermal coupling are compared and discussed. The accuracy of the model is appreciated with the electrical and thermal characterization of a NPvN power bipolar transistor using the ICCAP-Saber interface
Keywords :
power bipolar transistors; semiconductor device models; ICCAP-Saber interface; NPvN transistor; Saber circuit simulator; electrothermal coupling; one-dimensional model; power bipolar transistor; Bipolar transistors; Circuits; Electronic mail; Neodymium; Resistance heating; Semiconductor process modeling; Temperature; Thermal resistance; Thermoelectric devices; Thermoelectricity;
Conference_Titel :
Circuits and Systems, 1995. ISCAS '95., 1995 IEEE International Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-2570-2
DOI :
10.1109/ISCAS.1995.523779
