DocumentCode
3342811
Title
One-dimensional model of the power bipolar transistor with thermoelectrical interactions for circuit applications
Author
Maurel, T. ; Bouchakour, R. ; Lallement, C.
Author_Institution
Ecole Nat. Superieure des Telecommun., Paris, France
Volume
3
fYear
1995
fDate
30 Apr-3 May 1995
Firstpage
1860
Abstract
We have developed an electrothermal model for the bipolar power transistor, implemented in the Saber circuit simulator, in which the device´s temperature becomes an interactive variable during the simulation. Two approaches for the electrothermal coupling are compared and discussed. The accuracy of the model is appreciated with the electrical and thermal characterization of a NPvN power bipolar transistor using the ICCAP-Saber interface
Keywords
power bipolar transistors; semiconductor device models; ICCAP-Saber interface; NPvN transistor; Saber circuit simulator; electrothermal coupling; one-dimensional model; power bipolar transistor; Bipolar transistors; Circuits; Electronic mail; Neodymium; Resistance heating; Semiconductor process modeling; Temperature; Thermal resistance; Thermoelectric devices; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1995. ISCAS '95., 1995 IEEE International Symposium on
Conference_Location
Seattle, WA
Print_ISBN
0-7803-2570-2
Type
conf
DOI
10.1109/ISCAS.1995.523779
Filename
523779
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