High sensitivity magnetic field sensor using GMR materials with integrated electronics

Author

Brown, Jay L.

Author_Institution

Nonvolatile Electron. Inc., Eden Prairie, MN, USA

Volume

3

fYear

1995

fDate

30 Apr-3 May 1995

Firstpage

1864

Abstract

This paper presents the first commercially available IC that integrates Giant Magnetoresistive Ratio (GMR) materials with semiconductor devices. This marriage results in a highly sensitive, inexpensive, low power, and temperature stable magnetic field sensor. The chip uses a BiCMOS 1.5 μ process and a masterslice design approach that allows rapid prototyping of many custom configurations in a 35 mil by 95 mil size. Sensing of a wide range of magnetic fields (0-500 Gauss) is possible, with digital and linear outputs available. Temperature range of operation is -55 C to +150 C making the chip ideal for many automotive, industrial, and military applications

Keywords

BiCMOS integrated circuits; giant magnetoresistance; magnetic sensors; magnetoresistive devices; microsensors; -55 to 150 C; 0 to 500 gauss; 1.5 micron; 35 mil; 95 mil; BiCMOS chip; GMR materials; automotive applications; digital output; giant magnetoresistive ratio; industrial applications; integrated electronics; linear output; low power IC; magnetic field sensor; masterslice design; military applications; rapid prototyping; semiconductor devices; temperature stability; BiCMOS integrated circuits; Gaussian processes; Giant magnetoresistance; Magnetic fields; Magnetic materials; Magnetic sensors; Prototypes; Semiconductor devices; Semiconductor materials; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1995. ISCAS '95., 1995 IEEE International Symposium on

Conference_Location

Seattle, WA

Print_ISBN

0-7803-2570-2

Type

conf

DOI

10.1109/ISCAS.1995.523780

Filename

523780