• DocumentCode
    3342853
  • Title

    On the design of active GaAs multipliers

  • Author

    Lim, T.L. ; Haigh, D.G. ; Webster, D.R.

  • Author_Institution
    Dept. of Electron. Eng., Nanyang Technol. Inst., Singapore
  • Volume
    3
  • fYear
    1995
  • fDate
    30 Apr-3 May 1995
  • Firstpage
    1872
  • Abstract
    This paper is concerned with the design of high performance analogue multipliers using GaAs MESFET technology which use compact entirely active circuits and avoid the need for off-chip transformers or large on-chip baluns using coupled structures. A study by theory and simulation is made of various interface stages which drive the push-pull output FETs and some complete multipliers using various input signal splitters are compared. The need is identified for an improved signal splitter which can be realised in compact MMIC form
  • Keywords
    III-V semiconductors; MESFET integrated circuits; active networks; analogue multipliers; field effect MMIC; field effect analogue integrated circuits; gallium arsenide; GaAs; GaAs MESFET technology; MMIC; active circuits; analogue multipliers; design; interface stages; push-pull output FETs; signal splitters; simulation; Active circuits; Circuit simulation; Coupling circuits; FETs; Gallium arsenide; Impedance matching; MESFET circuits; MMICs; Signal processing; Transformers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1995. ISCAS '95., 1995 IEEE International Symposium on
  • Conference_Location
    Seattle, WA
  • Print_ISBN
    0-7803-2570-2
  • Type

    conf

  • DOI
    10.1109/ISCAS.1995.523782
  • Filename
    523782