DocumentCode :
3342853
Title :
On the design of active GaAs multipliers
Author :
Lim, T.L. ; Haigh, D.G. ; Webster, D.R.
Author_Institution :
Dept. of Electron. Eng., Nanyang Technol. Inst., Singapore
Volume :
3
fYear :
1995
fDate :
30 Apr-3 May 1995
Firstpage :
1872
Abstract :
This paper is concerned with the design of high performance analogue multipliers using GaAs MESFET technology which use compact entirely active circuits and avoid the need for off-chip transformers or large on-chip baluns using coupled structures. A study by theory and simulation is made of various interface stages which drive the push-pull output FETs and some complete multipliers using various input signal splitters are compared. The need is identified for an improved signal splitter which can be realised in compact MMIC form
Keywords :
III-V semiconductors; MESFET integrated circuits; active networks; analogue multipliers; field effect MMIC; field effect analogue integrated circuits; gallium arsenide; GaAs; GaAs MESFET technology; MMIC; active circuits; analogue multipliers; design; interface stages; push-pull output FETs; signal splitters; simulation; Active circuits; Circuit simulation; Coupling circuits; FETs; Gallium arsenide; Impedance matching; MESFET circuits; MMICs; Signal processing; Transformers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1995. ISCAS '95., 1995 IEEE International Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-2570-2
Type :
conf
DOI :
10.1109/ISCAS.1995.523782
Filename :
523782
Link To Document :
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