DocumentCode
3342862
Title
Radiation defects induced by ion implantation as a promising method of doping semiconductor type AIVBIV films
Author
Dashevsky, Z.M.
Author_Institution
Dept. of Mater. Eng., Ben-Gurion Univ. of the Negev, Beer-Sheva, Israel
fYear
1996
fDate
26-29 March 1996
Firstpage
440
Lastpage
444
Abstract
Radiation defects in PbTe single crystals and epitaxial films induced by ion implantation of various impurities amounting to as much as 2/spl middot/10/sup 4/ /spl mu/C/cm/sup 2/ have been investigated. It has been found that the formation of point defects (for the most part, Te vacancies) running as deep as 3 /spl mu/m and more determine transport properties due to the stabilization of electron concentration at a level of 2+4/spl middot/10/sup 18/ cm/sup -3/. The data are interpreted based on the model of the quasi-local (doublet) energy level of Te vacancies in the PbTe conduction band. The formation of solid solutions accompanied by the increase of band gap was detected in PbTe thin layers implanted with Zn.
Keywords
IV-VI semiconductors; energy gap; impurity states; ion beam effects; ion implantation; lead compounds; point defects; semiconductor doping; semiconductor epitaxial layers; semiconductor thin films; vacancies (crystal); zinc; PbTe single crystals; PbTe:Zn; Te vacancies; band gap; doping semiconductor type A/sup IV/B/sup IV/ films; epitaxial films; ion implantation; point defects; quasi-local doublet energy level; radiation defects; transport properties; Annealing; Conductive films; Conductivity; Crystals; Electrons; Ion implantation; Optical films; Semiconductor device doping; Semiconductor impurities; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 1996., Fifteenth International Conference on
Conference_Location
Pasadena, CA, USA
Print_ISBN
0-7803-3221-0
Type
conf
DOI
10.1109/ICT.1996.553523
Filename
553523
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