Title :
Radiation defects induced by ion implantation as a promising method of doping semiconductor type AIVBIV films
Author_Institution :
Dept. of Mater. Eng., Ben-Gurion Univ. of the Negev, Beer-Sheva, Israel
Abstract :
Radiation defects in PbTe single crystals and epitaxial films induced by ion implantation of various impurities amounting to as much as 2/spl middot/10/sup 4/ /spl mu/C/cm/sup 2/ have been investigated. It has been found that the formation of point defects (for the most part, Te vacancies) running as deep as 3 /spl mu/m and more determine transport properties due to the stabilization of electron concentration at a level of 2+4/spl middot/10/sup 18/ cm/sup -3/. The data are interpreted based on the model of the quasi-local (doublet) energy level of Te vacancies in the PbTe conduction band. The formation of solid solutions accompanied by the increase of band gap was detected in PbTe thin layers implanted with Zn.
Keywords :
IV-VI semiconductors; energy gap; impurity states; ion beam effects; ion implantation; lead compounds; point defects; semiconductor doping; semiconductor epitaxial layers; semiconductor thin films; vacancies (crystal); zinc; PbTe single crystals; PbTe:Zn; Te vacancies; band gap; doping semiconductor type A/sup IV/B/sup IV/ films; epitaxial films; ion implantation; point defects; quasi-local doublet energy level; radiation defects; transport properties; Annealing; Conductive films; Conductivity; Crystals; Electrons; Ion implantation; Optical films; Semiconductor device doping; Semiconductor impurities; Temperature dependence;
Conference_Titel :
Thermoelectrics, 1996., Fifteenth International Conference on
Conference_Location :
Pasadena, CA, USA
Print_ISBN :
0-7803-3221-0
DOI :
10.1109/ICT.1996.553523
