DocumentCode
3342879
Title
Preparation of highly effective p-Bi0.5Sb1.5Te3 and n-Bi2Te2.7Se0.3 films
Author
Stölzer, M. ; Stordeur, M. ; Stark, I.
Author_Institution
Martin-Luther-Univ., Halle-Wittenberg, Germany
fYear
1996
fDate
26-29 March 1996
Firstpage
445
Lastpage
449
Abstract
Bi/sub 0.5/Sb/sub 1.5/Te/sub 3/ and B2/sub i/Te/sub 2.7/Se/sub 0.3/ films were flash-evaporated onto oxidized aluminium and Kapton foil substrates. The films were characterized by SEM, EDX and electrical transport measurements (electrical conductivity, Hall coefficient and thermopower in the range 85...375 K). Highly effective films grown on Kapton show a (1 0 5) texture whereas films on Al/Al/sub 2/O/sub 3/ are (0 0 n) texturized. With an optimal amount of excess Te in the evaporant, after an annealing procedure a power factor of 4E-3 W K(E-2) m(E-1) at 300 K was reached.
Keywords
Hall effect; X-ray chemical analysis; annealing; bismuth compounds; electrical conductivity; scanning electron microscopy; semiconductor thin films; thermoelectric power; vapour deposited coatings; 85 to 375 K; Bi/sub 0.5/Sb/sub 1.5/Te/sub 3/; Bi/sub 2/Te/sub 2.7/Se/sub 0.3/; EDX; Hall coefficient; SEM; annealing; electrical conductivity; electrical transport; flash-evaporated; n-Bi/sub 2/Te/sub 2.7/Se/sub 0.3/ film; p-Bi/sub 0.5/Sb/sub 1.5/Te/sub 3/ film; power factor; thermopower; Bismuth; Composite materials; Conducting materials; Semiconductor films; Substrates; Tellurium; Temperature; Thermal conductivity; Thermal expansion; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 1996., Fifteenth International Conference on
Conference_Location
Pasadena, CA, USA
Print_ISBN
0-7803-3221-0
Type
conf
DOI
10.1109/ICT.1996.553524
Filename
553524
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