Title :
Properties of Cd and Zn partial electrolyte treated CIGS solar cells
Author :
Ramanathan, K. ; Hasoon, F.S. ; Smith, S. ; Mascarenhas, A. ; Al-Thani, H. ; Alleman, J. ; Ullal, H.S. ; Keane, J. ; Johns, P.K. ; Sites, J.R.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
We study the influence of Cd partial baths on the photovoltaic properties of CuInGaSe2 (CIGS) and CuInGaSSe2 (CIGSS) thin film absorbers. We find that efficient solar cells can be fabricated by this treatment, and we compare their properties; with those containing CdS window layers grown by chemical bath deposition. The results suggest that Cd plays a dominant role in establishing efficient photovoltaic junctions in Cu InSe2 alloys. Micron scale photoluminescence scans show non-uniformity along the length probed. Cd treatment quenches one of the luminescence transitions, which indicates a change in shallow acceptor level density. We present a model that helps to explain the evolution of photovoltaic action.
Keywords :
copper compounds; defect states; electrolytes; gallium compounds; indium compounds; interface states; liquid phase deposition; photoluminescence; radiation quenching; semiconductor growth; semiconductor thin films; solar cells; surface composition; ternary semiconductors; Cd partial baths; Cd partial electrolyte treated CIGS solar cells; CdS window layers; CuInGaSSe2; CuInGaSe2; CuInGaSe2 thin film absorbers; CulnGaSSe2 thin film absorbers; Zn partial electrolyte treated CIGS solar cells; chemical bath deposition; efficient photovoltaic junctions; efficient solar cells; luminescence transition quenching; micron scale photoluminescence scans; nonuniformity; photovoltaic action; photovoltaic properties; shallow acceptor level density; Chemicals; Computational Intelligence Society; Impurities; Laboratories; Photovoltaic cells; Photovoltaic systems; Physics; Solar power generation; Transistors; Zinc;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190617
