Title :
Improved efficiency of Cu(In,Ga)Se2 thin film solar cells by surface sulfurization using wet process
Author :
Nakada, Tokio ; Matsumoto, Kenju ; Okumura, Motonori
Author_Institution :
Dept. of Electr. Eng. & Electron., Aoyama Gakuin Univ., Tokyo, Japan
Abstract :
Surface sulfurization of CIGS thin films was carried out using aqueous solutions with group III chlorides (III=In, Ga, Al, Y) and thioacetamide (CH3CSNH2) in order to improve the junction characteristics of CIGS-based solar cells. All of the basic cell parameters of the CIGS-based thin film solar cells were found to improve dramatically after these treatments. In particular, the Jsc value increased remarkably for all devices with Ga-S and Al-S treatments. XPS analysis suggests that the origin of improved cell performance can be attributed to the formation of very thin sulfide layer on the CIGS layer and/or surface passivation by S atoms.
Keywords :
X-ray photoelectron spectra; copper compounds; gallium compounds; indium compounds; passivation; semiconductor thin films; solar cells; surface treatment; ternary semiconductors; Cu(In,Ga)Se2 thin film solar cells; Cu(InGa)Se2; S; XPS analysis; aqueous solutions; cell parameters; group III chlorides; improved efficiency; surface sulfurization; thioacetamide; wet process; Artificial intelligence; Fabrication; Passivation; Performance analysis; Photovoltaic cells; Sputtering; Substrates; Surface treatment; Temperature; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190618
