• DocumentCode
    3343070
  • Title

    Evaluation of defect levels formed in the nano-porous titanium oxide layer of dye-sensitized solar cell

  • Author

    Yoshiura, Masahio ; Yoshida, Fusahito

  • Author_Institution
    Dept. of Biomed. Eng., Osaka Inst. of Technol., Osaka, Japan
  • fYear
    2013
  • fDate
    June 30 2013-July 4 2013
  • Firstpage
    584
  • Lastpage
    586
  • Abstract
    The development of the dye-sensitized solar cell (DSC) has been expected to supply another solar cell other than the silicon solar cells, for its convenient production processes. The nano-porous titanium oxide (TiO2) layer, photo-electrode of DSC, is constructed on a F-doped SnO2 transparent electrode(FTO), before the dye deposition. The structure of the porous TiO2 layer, such as the existence of charge traps, seems to influence the photoelectric conversion efficiency of DSC. The possibility of estimating the photo-electrode efficiency by the charge trap structure was studied with thermally stimulated current (TSC) measurement. As a result of the TSC measurement, four charge traps were detected in the electrode and were evaluated the energy trap depths of 0.07 eV, 0.138 eV, 0.385 eV and 0.381 eV. The escape frequency factors were also evaluated in large span from 10 s-1 to 108 s-1.
  • Keywords
    nanoporous materials; solar cells; titanium compounds; F-doped transparent electrode; SnO2:F; TiO2; charge trap structure; defect level evaluation; dye deposition; dye-sensitized solar cell development; energy trap depths; escape frequency factors; nanoporous titanium oxide layer; photoelectric conversion efficiency; photoelectrode efficiency; porous titanium oxide layer structure; thermally stimulated current measurement; Current measurement; Electrodes; Photovoltaic cells; Semiconductor device measurement; Temperature; Temperature measurement; Titanium; asymptotic estimation method; dye-sensitized solar cell; thermally stimulated current; titanium oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid Dielectrics (ICSD), 2013 IEEE International Conference on
  • Conference_Location
    Bologna
  • ISSN
    2159-1687
  • Print_ISBN
    978-1-4799-0807-3
  • Type

    conf

  • DOI
    10.1109/ICSD.2013.6619830
  • Filename
    6619830