DocumentCode
3343070
Title
Evaluation of defect levels formed in the nano-porous titanium oxide layer of dye-sensitized solar cell
Author
Yoshiura, Masahio ; Yoshida, Fusahito
Author_Institution
Dept. of Biomed. Eng., Osaka Inst. of Technol., Osaka, Japan
fYear
2013
fDate
June 30 2013-July 4 2013
Firstpage
584
Lastpage
586
Abstract
The development of the dye-sensitized solar cell (DSC) has been expected to supply another solar cell other than the silicon solar cells, for its convenient production processes. The nano-porous titanium oxide (TiO2) layer, photo-electrode of DSC, is constructed on a F-doped SnO2 transparent electrode(FTO), before the dye deposition. The structure of the porous TiO2 layer, such as the existence of charge traps, seems to influence the photoelectric conversion efficiency of DSC. The possibility of estimating the photo-electrode efficiency by the charge trap structure was studied with thermally stimulated current (TSC) measurement. As a result of the TSC measurement, four charge traps were detected in the electrode and were evaluated the energy trap depths of 0.07 eV, 0.138 eV, 0.385 eV and 0.381 eV. The escape frequency factors were also evaluated in large span from 10 s-1 to 108 s-1.
Keywords
nanoporous materials; solar cells; titanium compounds; F-doped transparent electrode; SnO2:F; TiO2; charge trap structure; defect level evaluation; dye deposition; dye-sensitized solar cell development; energy trap depths; escape frequency factors; nanoporous titanium oxide layer; photoelectric conversion efficiency; photoelectrode efficiency; porous titanium oxide layer structure; thermally stimulated current measurement; Current measurement; Electrodes; Photovoltaic cells; Semiconductor device measurement; Temperature; Temperature measurement; Titanium; asymptotic estimation method; dye-sensitized solar cell; thermally stimulated current; titanium oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid Dielectrics (ICSD), 2013 IEEE International Conference on
Conference_Location
Bologna
ISSN
2159-1687
Print_ISBN
978-1-4799-0807-3
Type
conf
DOI
10.1109/ICSD.2013.6619830
Filename
6619830
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