DocumentCode
3343107
Title
GaAs/Al/sub x/Ga/sub 1-x/As quantum cascade lasers
Author
Sirtori, C. ; Kruck, P. ; Barbieri, S. ; Collot, P. ; Nagle, J. ; Beck, M. ; Faist, J. ; Oesterle, U.
Author_Institution
Lab. Central de Recherches, Thomson-CSF, Orsay, France
fYear
1992
fDate
23-28 May 1992
Firstpage
1
Abstract
Summary form only given. By fabricating quantum cascade (QC) lasers in AlGaAs-GaAs we demonstrate that the fundamental concepts and design criteria can be truly extended in material systems, whilst still preserving the same basic characteristics in terms of threshold currents and output power.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; AlGaAs-GaAs; GaAs/Al/sub x/Ga/sub 1-x/As quantum cascade lasers; basic characteristics; design criteria; material systems; output power; quantum cascade laser fabrication; threshold currents; Gallium arsenide; Laser transitions; Laser tuning; Optical design; Optical materials; Optical waveguides; Photonic band gap; Quantum cascade lasers; Semiconductor materials; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-576-X
Type
conf
DOI
10.1109/QELS.1999.807074
Filename
807074
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