Title :
GaAs/Al/sub x/Ga/sub 1-x/As quantum cascade lasers
Author :
Sirtori, C. ; Kruck, P. ; Barbieri, S. ; Collot, P. ; Nagle, J. ; Beck, M. ; Faist, J. ; Oesterle, U.
Author_Institution :
Lab. Central de Recherches, Thomson-CSF, Orsay, France
Abstract :
Summary form only given. By fabricating quantum cascade (QC) lasers in AlGaAs-GaAs we demonstrate that the fundamental concepts and design criteria can be truly extended in material systems, whilst still preserving the same basic characteristics in terms of threshold currents and output power.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; AlGaAs-GaAs; GaAs/Al/sub x/Ga/sub 1-x/As quantum cascade lasers; basic characteristics; design criteria; material systems; output power; quantum cascade laser fabrication; threshold currents; Gallium arsenide; Laser transitions; Laser tuning; Optical design; Optical materials; Optical waveguides; Photonic band gap; Quantum cascade lasers; Semiconductor materials; Temperature;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-576-X
DOI :
10.1109/QELS.1999.807074
