Superlattice quantum cascade lasers operating at very long wavelengths (/spl lambda//spl ap/17 /spl mu/m)

Author

Tredicucci, A. ; Capasso, Federico ; Gmachl, C. ; Sivco, D.L. ; Hutchinson, A.L. ; Cho, Andrew Y.

Author_Institution

Lucent Technols., Bell Labs., Murray Hill, NJ, USA

fYear

1992

fDate

23-28 May 1992

Firstpage

2

Lastpage

3

Abstract

Summary form only given. We present the realization of a quantum cascade (QC) laser employing so-called chirped superlattices and operating at 17 /spl mu/m, which represents the first demonstration of a semiconductor injection laser based on intra-band transitions at wavelengths beyond the atmospheric windows. A schematic band diagram of the structure, which has been grown by molecular beam epitaxy (MBE) in InGaAs-InAlAs is given.

Keywords

III-V semiconductors; aluminium compounds; chirp modulation; electro-optical modulation; gallium arsenide; indium compounds; infrared sources; laser transitions; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; semiconductor superlattices; 17 mum; InGaAs-InAlAs; MBE; atmospheric window; chirped superlattices; intra-band transitions; molecular beam epitaxy; schematic band diagram; semiconductor injection laser; superlattice quantum cascade lasers; very long wavelengths; Current density; Gas lasers; Laser tuning; Optical superlattices; Optical tuning; Optical waveguides; Pulse measurements; Quantum cascade lasers; Temperature distribution; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-576-X

Type

conf

DOI

10.1109/QELS.1999.807078

Filename

807078