Noncascaded intersubband injection lasers and scaling with the number of stages in quantum cascade lasers

Author

Gmachl, C. ; Capasso, F. ; Tredicucci, A. ; Sivco, D.L. ; Hutchinson, A.L. ; Cho, A.Y.

Author_Institution

Lucent Technol., Bell Labs., Murray Hill, NJ, USA

fYear

1992

fDate

23-28 May 1992

Firstpage

3

Lastpage

4

Abstract

Summary form only given. We demonstrate the first noncascaded intersubband injection laser based on a single active region. Several major advantages arise from this new structure: first, only few layers are necessary to build the active region core, which simplifies sample growth and preparation. Second, low operating voltage of 2 to 3 V was achieved which is essential for applications which have previously been optimized for interband diode lasers and their low voltage compliance requirements. The laser structure has been grown in the InGaAs-AlInAs on InP material system using molecular beam epitaxy.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical fabrication; optimisation; quantum well lasers; semiconductor growth; 2 to 3 V; InGaAs-AlInAs; InP; InP material system; active region core; interband diode lasers; laser structure; low operating voltage; low voltage compliance requirements; molecular beam epitaxy; noncascaded intersubband injection laser; noncascaded intersubband injection lasers; quantum cascade lasers; sample growth; sample preparation; single active region; Electron optics; Face detection; Laser modes; Optical pulses; Optical resonators; Optical waveguides; Quantum cascade lasers; Space vector pulse width modulation; Temperature; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-576-X

Type

conf

DOI

10.1109/QELS.1999.807079

Filename

807079