DocumentCode :
3343237
Title :
Progress in Apollo® technology
Author :
Cunningham, Daniel W. ; Frederick, M. ; Gittings, B. ; Grammond, L. ; Harrer, S. ; Intagliata, J. ; O´Connor, N. ; Rubcich, M. ; Skinner, D. ; Veluchamy, P.
Author_Institution :
BP Solar, Fairfield, CA, USA
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
559
Lastpage :
562
Abstract :
This paper describes the work performed at BP Solar in Fairfield California on scaling its Apoll®, CdTe technology from 0.09m2 to 0.94 m2. The paper highlights the efforts and progress in CdS window layer optimization and characterization of CdTe layer, which enabled BP Solar to maintain a high quality device on very large substrates. The effect of tin oxide sheet resistance, CdS absorption, and CdTe grain size are all discussed. Through this work, the aperture area efficiency increased from approximately 6% to 11%. Also, BP Solar set up two beta sites in order to test the outdoor performance of the modules. BP Solar performed internal light soaking and worked closely with IEC (UOD) where cells were stressed under extreme conditions.
Keywords :
II-VI semiconductors; cadmium compounds; grain size; semiconductor device measurement; solar cells; Apollo® technology; CdS absorption; CdS window layer optimization; CdTe grain size; CdTe technology; CdTe-CdS; light soaking; sheet resistance; Absorption; Apertures; Chemical technology; Commercialization; Grain boundaries; Grain size; Performance analysis; Substrates; Tin; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190626
Filename :
1190626
Link To Document :
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