DocumentCode :
3343269
Title :
Limiting efficiency of silicon based nanostructure solar cells for multiple exciton generation
Author :
Jongwon Lee ; Goodnick, S.M. ; Honsberg, Christiana B.
Author_Institution :
Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA
fYear :
2013
fDate :
16-21 June 2013
Firstpage :
1046
Lastpage :
1049
Abstract :
The materials for multiple exciton generation (MEG) solar cells have often focused on colloidal systems using low band gap materials such as PbSe. However, detailed balance calculations with non-ideal quantum yield (QYs) lead to higher band gaps, with silicon close to the optimum value. We calculate the conversion efficiency of MEG processes including non-idealities for nanostructured silicon. We also boost efficiency of MEG solar cells using multijunction solar cell configurations. Incorporating MEG into multijunction solar cells leads to increased calculated efficiencies due to QYs greater than unity in each junction. Here we have simulated the possible MEG enhanced QY of each junction and the corresponding conversion efficiencies for double junction hybrid solar cells. This hybrid structure extends the opportunities to maximize the MEG effect and also to select the appropriate effective bandgaps using silicon nanostructures.
Keywords :
excitons; nanostructured materials; silicon; solar cells; MEG processes; MEG solar cells; Si; band gaps; colloidal systems; double junction hybrid solar cells; low band gap materials; multijunction solar cell configurations; multiple exciton generation solar cells; nanostructured silicon; nonideal quantum yield; silicon based nanostructure solar cells; Excitons; Junctions; Nanostructures; Photonic band gap; Photovoltaic cells; Silicon; multiple exciton generation; nanostructure; quantum dots; silicon; thermodynamic limit;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/PVSC.2013.6744320
Filename :
6744320
Link To Document :
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