Title :
Three-band model for quantum interference current in semiconductors
Author_Institution :
Dept. of Phys. & Astron., New Mexico Univ., Albuquerque, NM, USA
Abstract :
Summary form only given. A simple three parabolic band model is presented that analytically describes the material scaling and polarization dependence of quantum interference current (QUIC) in zinc-blende semiconductors. It is important to note that the consideration of two valence bands plays a critical role in determining the correct polarization dependence.
Keywords :
II-VI semiconductors; light polarisation; quantum interference phenomena; quantum optics; semiconductor device models; valence bands; GaAs; correct polarization dependence; material scaling; polarization dependence; quantum interference current; semiconductors; three parabolic band model; three-band model; valence bands; zinc-blende semiconductors; Absorption; Astronomy; Current density; Electronic mail; Gallium arsenide; Interference; Optical control; Optical polarization; Plasmas; Tensile stress;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-576-X
DOI :
10.1109/QELS.1999.807087
