DocumentCode :
3343347
Title :
Analytical drift-diffusion modeling of GaAs solar cells incorporating a back mirror
Author :
Lumb, Matthew P. ; Bailey, Christopher G. ; Adams, Jessica G. J. ; Hillier, G. ; Tuminello, F. ; Elarde, Victor C. ; Walters, R.J.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
fYear :
2013
fDate :
16-21 June 2013
Firstpage :
1063
Lastpage :
1068
Abstract :
In this work we extend the analytical drift-diffusion model, or Hovel model, to model the electrical characteristics of solar cells incorporating a back mirror. We use a compact summation approach to derive modified optical generation functions in homojunction solar cells, considering both coherent and incoherent reflections from the back reflector. We use the model to simulate the performance of a real GaAs solar cell device fabricated using an epitaxial-lift-off procedure, demonstrating excellent agreement between the simulated and measured characteristics. We also calculate the performance of the same solar cell with different back reflectors, including metal mirrors and a distributed Bragg reflector.
Keywords :
III-V semiconductors; arsenic compounds; distributed Bragg reflectors; elemental semiconductors; gallium compounds; optical elements; solar cells; analytical drift-diffusion modeling; back mirror; back reflectors; coherent reflections; compact summation approach; distributed Bragg reflector; electrical characteristics; gallium-arsenide solar cells; homojunction solar cells; incoherent reflections; metal mirrors; optical generation functions; Analytical models; Distributed Bragg reflectors; Gallium arsenide; Photovoltaic cells; Reflection; Reflectivity; Photovoltaic cells; Reflection; Semiconductor device modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/PVSC.2013.6744324
Filename :
6744324
Link To Document :
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