A low-voltage, bulk-driven MOSFET current mirror for CMOS technology

Author

Blalock, Benjamin J. ; Allen, Phillip E.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

3

fYear

1995

fDate

30 Apr-3 May 1995

Firstpage

1972

Abstract

A bulk-driven, MOSFET current mirror is described which is capable of operating at power supplies down to 1 V using standard CMOS technologies with threshold voltages in the range of ±0.8 V. The bulk-driven MOSFET configuration removes the requirement that the input voltage of the current mirror equal V_GS>V_T. At V_DD/V_SS of+0.75 V/-0.75 V, measurements on simple current mirrors using this new technique require only about 0.1 V across the input device of the current mirror circuit and exhibit saturation voltages on the output device of the current mirror comparable to that of standard simple current mirrors. The operation and first-order models for the bulk-driven MOSFET are presented in this paper along with the operation and experimental results of a simple, bulk-driven mirror

Keywords

CMOS analogue integrated circuits; amplifiers; integrated circuit design; integrated circuit modelling; -0.8 to 0.8 V; CMOS technology; analogue ICs; bulk-driven MOSFET; current mirror; first-order models; saturation voltages; threshold voltages; Analog circuits; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS technology; Current measurement; MOSFET circuits; Mirrors; Power MOSFET; Power supplies; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1995. ISCAS '95., 1995 IEEE International Symposium on

Conference_Location

Seattle, WA

Print_ISBN

0-7803-2570-2

Type

conf

DOI

10.1109/ISCAS.1995.523807

Filename

523807