Title :
A low-voltage, bulk-driven MOSFET current mirror for CMOS technology
Author :
Blalock, Benjamin J. ; Allen, Phillip E.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
30 Apr-3 May 1995
Abstract :
A bulk-driven, MOSFET current mirror is described which is capable of operating at power supplies down to 1 V using standard CMOS technologies with threshold voltages in the range of ±0.8 V. The bulk-driven MOSFET configuration removes the requirement that the input voltage of the current mirror equal VGS>VT. At VDD/VSS of+0.75 V/-0.75 V, measurements on simple current mirrors using this new technique require only about 0.1 V across the input device of the current mirror circuit and exhibit saturation voltages on the output device of the current mirror comparable to that of standard simple current mirrors. The operation and first-order models for the bulk-driven MOSFET are presented in this paper along with the operation and experimental results of a simple, bulk-driven mirror
Keywords :
CMOS analogue integrated circuits; amplifiers; integrated circuit design; integrated circuit modelling; -0.8 to 0.8 V; CMOS technology; analogue ICs; bulk-driven MOSFET; current mirror; first-order models; saturation voltages; threshold voltages; Analog circuits; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS technology; Current measurement; MOSFET circuits; Mirrors; Power MOSFET; Power supplies; Threshold voltage;
Conference_Titel :
Circuits and Systems, 1995. ISCAS '95., 1995 IEEE International Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-2570-2
DOI :
10.1109/ISCAS.1995.523807
