DocumentCode :
3343444
Title :
Controlled drift of indirect excitons in GaAs coupled quantum wells
Author :
Snoke, David ; Negoita, V. ; Eberl, K.
Author_Institution :
Dept. of Phys. & Astron., Pittsburgh Univ., PA, USA
fYear :
1992
fDate :
23-28 May 1992
Firstpage :
11
Lastpage :
12
Abstract :
Summary form only given. Because excitons are charge neutral electron-hole pairs, they do not normally move in response to an electric field, and therefore it is difficult to control their motion. We report here the successful demonstration of two methods of exerting a force on excitons in GaAs coupled quantum wells. Both of these methods have been used to confine excitons to a spatial trap which is well approximated by harmonic potential in the plane of the wells.
Keywords :
excitons; gallium arsenide; light coherence; semiconductor quantum wells; GaAs; GaAs coupled quantum wells; charge neutral electron-hole pairs; controlled drift; electric field; exciton confinement; harmonic potential; indirect excitons; motion control; spatial trap; Absorption; Delay; Energy measurement; Excitons; Gallium arsenide; Interference; NIST; Optical sensors; Probes; Space vector pulse width modulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-576-X
Type :
conf
DOI :
10.1109/QELS.1999.807094
Filename :
807094
Link To Document :
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