Title :
Treatment effects on deep levels in CdTe based solar cells
Author :
Gilmore, A.S. ; Kaydanov, V. ; Ohno, T.R. ; Rose, D. ; Feldman, S.D. ; Erslev, P.
Author_Institution :
Colorado Sch. of Mines, Golden, CO, USA
Abstract :
This paper presents capacitance-voltage, admittance spectroscopy, and drive-level capacitance profiling (DLCP) data on CdTe solar cells prepared with and without standard treatments (CdCl2 treatment and/or BrMeOH etch). The DLCP technique confirmed previous results and added the ability to measure deep trapping state spatial distributions. The concentrations and depth profiles of the deep states observed depended upon the treatments used. High concentrations (>1×1015 cm-3) of trapping states with a variety of characteristic frequencies exist in all cells studied. The sample with neither standard treatment had the lowest concentration of deep trapping states.
Keywords :
II-VI semiconductors; cadmium compounds; capacitance; deep levels; semiconductor device measurement; solar cells; BrMeOH etch; CdCl2; CdCl2 treatment; CdTe; CdTe based solar cells; DLCP; admittance spectroscopy; capacitance-voltage; deep levels; deep states; deep trapping state spatial distributions; drive-level capacitance profiling; treatment effects; Admittance measurement; Annealing; Capacitance; Capacitance-voltage characteristics; Doping; Etching; Frequency; Methanol; Photovoltaic cells; Spectroscopy;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190637