Rabi oscillations and Raman coherences in semiconductor quantum wells

Summary form only given. We investigate theoretically the relation between generalized Rabi oscillations involving optical transitions in three band systems and Raman coherences. The system under consideration is a conventional GaAs semiconductor quantum well in which only the lowest subband of the conduction, the heavy hole bands need to be taken into account. We consider two simultaneous, strong sub-picosecond pulses (770 fs) of opposite circular polarization, spectrally centered at the hh and the lh-excitons respectively.