Coherent dynamics of excitons in shallow superlattices

Author

Rosam, B. ; Loser, F. ; Lyssenko, V.G. ; Leo, K. ; Kholer, K.

Author_Institution

Inst. fur Angwandte Photophys., Tech. Univ. Dresden, Germany

fYear

1992

fDate

23-28 May 1992

Firstpage

15

Abstract

Summary form only given. Shallow superlattices are very promising for optoelectronic devices due to their high nonlinearity and fast carrier sweep-out. Detailed investigations of the electronic structure (such as the excitonic binding energy) and the high field transport properties have been scarce, however. We have investigated different shallow superlattices of GaAs-AlGaAs using spectrally resolved transient four wave mixing under various excitation conditions.

Keywords

III-V semiconductors; aluminium compounds; excitons; gallium arsenide; light coherence; multiwave mixing; semiconductor superlattices; GaAs-AlGaAs; coherent dynamics; excitation conditions; excitonic binding energy; excitons; fast carrier sweep-out; high field transport properties; high nonlinearity; optoelectronic devices; shallow superlattices; spectrally resolved transient four wave mixing; Excitons; Gallium arsenide; Interference; Lattices; Optoelectronic devices; Quantum dots; Shape control; Spectroscopy; Superlattices; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-576-X

Type

conf

DOI

10.1109/QELS.1999.807100

Filename

807100