DocumentCode
3343581
Title
Optical spectroscopy of single semiconductor quantum dots
Author
Dekel, E. ; Gershoni, D. ; Ehrenfreund, E. ; Petroff, Pierre M.
Author_Institution
Dept. of Phys., Technion-Israel Inst. of Technol., Haifa, Israel
fYear
1992
fDate
23-28 May 1992
Firstpage
15
Abstract
Summary form only given. Low temperature confocal optical microscopy is used to spectroscopically study emission from a single semiconductor quantum dot. The spectrally sharp transitions between discrete confined multiexcitonic states are quantitatively explained using a few interacting carrier Hamiltonian.
Keywords
excitons; low-temperature techniques; optical focusing; optical microscopy; semiconductor quantum dots; spectroscopy; discrete confined multiexcitonic states; few interacting carrier Hamiltonian; low temperature confocal optical microscopy; optical spectroscopy; single semiconductor quantum dot; single semiconductor quantum dots; spectrally sharp transitions; Excitons; Gallium arsenide; Interference; Lattices; Quantum dots; Semiconductor superlattices; Shape control; Spectroscopy; US Department of Transportation; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-576-X
Type
conf
DOI
10.1109/QELS.1999.807101
Filename
807101
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