• DocumentCode
    3343620
  • Title

    CIGS devices with ZIS, In2S3, and CdS buffer layers

  • Author

    Delahoy, A.E. ; Akhtar, M. ; Cambridge, J. ; Chen, L. ; Govindarajan, R. ; Guo, S. ; Romero, M.J.

  • Author_Institution
    Energy Photovoltaics, Princeton, NJ, USA
  • fYear
    2002
  • fDate
    19-24 May 2002
  • Firstpage
    640
  • Lastpage
    643
  • Abstract
    The device performances of Cu(In,Ga)Se2 solar cells are compared as a function of various buffer layers applied by thermal evaporation that are considered as candidates to replace the conventional CdS buffer layer applied by chemical bath deposition. The buffer layers include ZnIn2Se4 (ZIS), In2Se3 and ZnSe. Devices with CdS and ZIS buffers are also studied by EBIC and cathodoluminescence.
  • Keywords
    EBIC; cadmium compounds; cathodoluminescence; copper compounds; gallium compounds; indium compounds; semiconductor device measurement; solar cells; ternary semiconductors; vacuum deposited coatings; zinc compounds; CIGS devices; Cu(InGa)Se2; EBIC; In2Se3; ZIS; ZnIn2Se4; ZnSe; buffer layers; cathodoluminescence; device performance; solar cells; thermal evaporation; Buffer layers; Chemicals; Conducting materials; Glass; Laboratories; Manufacturing processes; Photovoltaic cells; Renewable energy resources; Temperature; Zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
  • ISSN
    1060-8371
  • Print_ISBN
    0-7803-7471-1
  • Type

    conf

  • DOI
    10.1109/PVSC.2002.1190646
  • Filename
    1190646
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3343620