DocumentCode
3343634
Title
Diode-grid oscillators
Author
Popovic, Z.B. ; Rutledge, D.B.
Author_Institution
Div. of Eng. & Appl. Sci., California Inst. of Technol., Pasadena, CA, USA
fYear
1988
fDate
6-10 June 1988
Firstpage
442
Abstract
Loading a two-dimensional grid with active devices offers a means of combining the power of solid-state devices in the microwave and millimeter-wave range. The grid structure allows a large number of negative resistance devices to be combined. This approach is attractive because the active devices do not need an external locking signal, and the combining is done in free space. The loaded grid is a simple planar structure suitable for monolithic integration. Preliminary measurements on a nine-diode grid at 10 GHz show power-combining and frequency-locking without an external locking signal.<>
Keywords
Gunn oscillators; negative resistance; 10 GHz; Gunn diodes; active devices; diode-grid oscillators; frequency-locking; microwave devices; millimeter-wave range; negative resistance devices; planar structure; power-combining; solid-state devices; two-dimensional grid; Capacitance; Equivalent circuits; Inductance; Microwave oscillators; Mirrors; Power generation; Radio frequency; Schottky diodes; Solid state circuits; Transmission lines;
fLanguage
English
Publisher
ieee
Conference_Titel
Antennas and Propagation Society International Symposium, 1988. AP-S. Digest
Conference_Location
Syracuse, NY, USA
Type
conf
DOI
10.1109/APS.1988.94103
Filename
94103
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