Title :
Diode-grid oscillators
Author :
Popovic, Z.B. ; Rutledge, D.B.
Author_Institution :
Div. of Eng. & Appl. Sci., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Loading a two-dimensional grid with active devices offers a means of combining the power of solid-state devices in the microwave and millimeter-wave range. The grid structure allows a large number of negative resistance devices to be combined. This approach is attractive because the active devices do not need an external locking signal, and the combining is done in free space. The loaded grid is a simple planar structure suitable for monolithic integration. Preliminary measurements on a nine-diode grid at 10 GHz show power-combining and frequency-locking without an external locking signal.<>
Keywords :
Gunn oscillators; negative resistance; 10 GHz; Gunn diodes; active devices; diode-grid oscillators; frequency-locking; microwave devices; millimeter-wave range; negative resistance devices; planar structure; power-combining; solid-state devices; two-dimensional grid; Capacitance; Equivalent circuits; Inductance; Microwave oscillators; Mirrors; Power generation; Radio frequency; Schottky diodes; Solid state circuits; Transmission lines;
Conference_Titel :
Antennas and Propagation Society International Symposium, 1988. AP-S. Digest
Conference_Location :
Syracuse, NY, USA
DOI :
10.1109/APS.1988.94103