Quantum-confined Stark effect and phase-space exciton quenching in quantum wires

Author

Weman, H. ; Martinet, E. ; Dupertuis, M.-A. ; Rudra, A. ; Condo, A.M. ; Kapon, E.

Author_Institution

Dept. of Phys., Swiss Fed. Inst. of Technol., Lausanne, Switzerland

fYear

1992

fDate

23-28 May 1992

Firstpage

17

Lastpage

18

Abstract

Summary form only given. We report on an investigation of QCSE and phase space exciton quenching (PEQ) in V-groove QWRs. The grown structures, consisting of an intrinsic region containing the crescent shaped QWR and undoped AlGaAs barrier layers, were processed into p- or n-type Schottky diodes.

Keywords

Schottky diodes; excitons; optical saturable absorption; quantum confined Stark effect; semiconductor quantum wires; AlGaAs; QCSE; V-groove QWRs; crescent shaped QWR; grown structures; intrinsic region; n-type Schottky diodes; p-type Schottky diodes; phase space exciton quenching; phase-space exciton quenching; quantum wires; quantum-confined Stark effect; undoped AlGaAs barrier layers; Bleaching; Charge carrier processes; Excitons; Filling; Gallium arsenide; Optical modulation; Photonic band gap; Physics; Stark effect; Stationary state;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-576-X

Type

conf

DOI

10.1109/QELS.1999.807106

Filename

807106