DocumentCode :
3343701
Title :
Cd free CIGS solar cells fabricated by dry processes
Author :
Negami, Takayuki ; Aoyagi, Taikan ; Satoh, Takuya ; Shimakawa, Shin-Ichi ; Hayashi, Shigeo ; Yasuhiro Haskimoto
Author_Institution :
Matsushita Electr. Ind. Co., Ltd, Kyoto, Japan
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
656
Lastpage :
659
Abstract :
Dry processes for fabrication of CIGS solar cells are suitable for high throughput mass production based on physical vapor deposition. We report on Cd free CIGS solar cells fabricated by dry processes. To form a homo pn junction, Zn doped into the CIGS surface by Zn evaporation and substrate heating after the preparation of the CIGS films. Zn1-xMgxO films with controllable band offset to CIGS films were directly prepared onto the Zn doped surface by sputtering. Cell performances were improved by post-annealing of devices. The cell fabricated by the dry processes showed an efficiency of 16.2%.
Keywords :
annealing; copper compounds; gallium compounds; indium compounds; semiconductor device measurement; solar cells; sputtered coatings; ternary semiconductors; vapour deposited coatings; 16.2 percent; Cd free CIGS solar cells; CuInGaSe:Zn; ZnMgO; annealing; cell performance; dry process fabrication; efficiency; high throughput mass production; homo pn junction; physical vapor deposition; sputtering; Buffer layers; Chemical vapor deposition; Conductive films; Doping; Fabrication; Heating; Photovoltaic cells; Sputtering; Substrates; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190650
Filename :
1190650
Link To Document :
بازگشت