Cd free CIGS solar cells fabricated by dry processes

Author

Negami, Takayuki ; Aoyagi, Taikan ; Satoh, Takuya ; Shimakawa, Shin-Ichi ; Hayashi, Shigeo ; Yasuhiro Haskimoto

Author_Institution

Matsushita Electr. Ind. Co., Ltd, Kyoto, Japan

fYear

2002

fDate

19-24 May 2002

Firstpage

656

Lastpage

659

Abstract

Dry processes for fabrication of CIGS solar cells are suitable for high throughput mass production based on physical vapor deposition. We report on Cd free CIGS solar cells fabricated by dry processes. To form a homo pn junction, Zn doped into the CIGS surface by Zn evaporation and substrate heating after the preparation of the CIGS films. Zn_1-xMg_xO films with controllable band offset to CIGS films were directly prepared onto the Zn doped surface by sputtering. Cell performances were improved by post-annealing of devices. The cell fabricated by the dry processes showed an efficiency of 16.2%.

Keywords

annealing; copper compounds; gallium compounds; indium compounds; semiconductor device measurement; solar cells; sputtered coatings; ternary semiconductors; vapour deposited coatings; 16.2 percent; Cd free CIGS solar cells; CuInGaSe:Zn; ZnMgO; annealing; cell performance; dry process fabrication; efficiency; high throughput mass production; homo pn junction; physical vapor deposition; sputtering; Buffer layers; Chemical vapor deposition; Conductive films; Doping; Fabrication; Heating; Photovoltaic cells; Sputtering; Substrates; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

ISSN

1060-8371

Print_ISBN

0-7803-7471-1

Type

conf

DOI

10.1109/PVSC.2002.1190650

Filename

1190650