Title :
Excitons, biexcitons, and dephasing in GaAs T-shaped quantum wires measured by four-wave mixing
Author :
Langbein, W. ; Gislason, H. ; Hvam, J.M.
Author_Institution :
Experimentelle Phys. EIIb, Dortmund Univ., Germany
Abstract :
Summary form only given. We investigate the excitonic properties of a high-quality T-shaped wire (T-QWR) sample by four-wave mixing (FWM). It is a confinement optimized structure with 20 meV exciton confinement energy and only 3 meV in homogeneous width of the T-QWR exciton resonance. It consists of a 24 nm [001] AlGaAs multiple quantum well (QW) structure.
Keywords :
III-V semiconductors; biexcitons; excitons; gallium arsenide; multiwave mixing; semiconductor quantum wires; 20 meV; 24 nm; 3 meV; AlGaAs multiple quantum well; GaAs; GaAs T-shaped quantum wires; T-QWR exciton resonance; biexcitons; confinement optimized structure; dephasing; excitonic properties; excitons; four-wave mixing; high-quality T-shaped wire; homogeneous width; meV exciton confinement energy; Delay; Energy measurement; Excitons; Four-wave mixing; Gallium arsenide; Optical pulse generation; Polarization; Resonance; Temperature; Wires;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-576-X
DOI :
10.1109/QELS.1999.807108
