Present status and critical issues of III-V nanoelectronics

Recent progress and key issues of related to III-V nanoelectronics are presented with emphases on GaAs-based quantum nanoelectronics and GaN-based power electronics. As a new system architecture for quantum devices, a hexagonal BDD quantum logic circuit approach by the author´s group is described with encouraging result. Selective MBE growth is described as a promising formation method of a high density IIi- V nanostnJcture networks. The key processing issue is shown to be nanometer-scale control of surface and interface both for GaAsbased nanoelectronics and GaN power electronics.